Specjalne strefy ekonomiczne a rozwój regionalny (na przykładzie suwalskiej specjalnej strefy ekonomicznej)

Zdigitalizowano i udostępniono w ramach projektu pn. Rozbudowa otwartych zasobów naukowych Repozytorium Uniwersytetu w Białymstoku, dofinansowanego z programu „Społeczna odpowiedzialność nauki” Ministra Edukacji i Nauki na podstawie umowy SONB/SP/512497/2021.Uniwersytet w Białymstoku, Wydział EkonomicznyInformacje generalne na temat SSSE, www.ssse.com.pl.Kosiedowski W., Cele polityki gospodarczej państwa w aspekcie podnoszenia konkurencyjności regionów, [w:] Klamut M., Cybulski L. (red.), Polityka regionalna i jej rola w podnoszeniu konkurencyjności regionów, Wyd. Akademii Ekonomicznej im. Oskara Langego we Wrocławiu, Wrocław 2000.Kryńska E. (red.), Polskie specjalne strefy ekonomiczne - zamierzenia i efekty, Wydawnictwo Naukowe SCHOLAR, Warszawa 2000.Rybicki M., Kierunki polityki regionalnej państwa, Rozwój regionalny w procesie transformacji, Fundacja Promocji Rozwoju im. E. Lipińskiego, Warszawa 1996.Ustawa z dnia 20 października 1994 r. o specjalnych strefach ekonomicznych, DZ.U. nr 123, poz.600 (z późniejszymi zmianami).Winiarski B., Polityka regionalna, PWE, Warszawa 1996.www.infoport.pl.www.ssse.com.pl.22723

Ochrona przyrody a rozwój regionalny

Zdigitalizowano i udostępniono w ramach projektu pn. Rozbudowa otwartych zasobów naukowych Repozytorium Uniwersytetu w Białymstoku, dofinansowanego z programu „Społeczna odpowiedzialność nauki” Ministra Edukacji i Nauki na podstawie umowy SONB/SP/512497/2021Wydział Ekonomii i Zarządzania Uniwersytetu w BiałymstokuBocian A.F., Polityka gospodarcza: wybrane elementy, Wyd. UwB, Białystok 2002.Boć J. (red.), Ochrona środowiska, Kolonia Limitem, Kolonia 2000.Dobrzański G., Dobrzańska B. M., Kiełczewski D., Łacińska E., Ochrona środowiska przyrodniczego, Wydawnictwo Ekonomia i Środowisko, Białystok 1995.Górka K., Poskrobko B., Kadecki W., Ochrona środowiska, PWE, Warszawa 2001.Małachowski K. (red.), Gospodarka a środowisko i ekologia, Wyd. CeDeWu, Warszawa 2007.Mały rocznik statystyczny, GUS, Warszawa 2006.Mazur E., Środowisko przyrodnicze. Zagrożenia, ochrona, kształtowanie, Wydawnictwo Naukowe Uniwersytetu Szczecińskiego, Szczecin 2004.Mazur E., Zagrożenia środowiska przyrodniczego a ekonomiczno-prawne aspekty jego ochrony, Wyd. Uniwersytet Szczeciński, Szczecin 2000.Pyłka-Gutowska E., Ekologia z ochroną środowiska, Wydawnictwo Oświata, Warszawa 1998Strahl D. (red.), Metody oceny rozwoju regionalnego, Wydawnictwo Akademii Ekonomicznej im. Oskara Lanego we Wrocławiu, Wrocław 2006.www.polskieszlaki.pl25025

Molecular beam epitaxy of GaBiAs on (311) B GaAs substrates

We report the growth by molecular beam epitaxy of Ga Bix As1-x epilayers on (311) B GaAs substrates. We use high-resolution x-ray diffraction (HRXRD), transmission electron microscopy, and Z -contrast imaging to characterize the structural properties of the as-grown material. We find that the incorporation of Bi into the GaBiAs alloy, as determined by HRXRD, is sizably larger in the (311) B epilayers than in (001) epilayers, giving rise to reduced band-gap energies as obtained by optical transmission spectroscopy. © 2007 American Institute of Physics

Mg(2)Si(x)Sn(1-x)heterostructures on Si(111) substrate for optoelectronics and thermoelectronics

Thin (50-90 m) non-doped and doped (by Al atoms) Mg2Sn0.6Si0.4 and Mg(2)Sn(0.4)Si(0.6)films with roughness of 1.9-3.7 nm have been grown by multiple deposition and single annealing at 150 degrees C of multilayers formed by repetition deposition of three-layers (Si-Sn-Mg) on Si(111) p-type wafers with 45 cm resistivity. Transmission electron microscopy has shown that the first forming layer is an epitaxial layer of hex-Mg2Sn(300) on Si(111) substrate with thickness not more than 5-7 nm. Epitaxial relationships: hex-Mg2Sn(300)parallel to Si(111), hex-Mg2Sn[001]parallel to Si[-112] and hex-Mg2Sn[030]parallel to Si[110] have been found for the epitaxial layer. But inclusions of cub-Mg2Si were also observed inside hex-Mg2Sn layer. It was found that the remaining part of the film thickness is in amorphous state and has a layered distribution of major elements: Mg, Sn and Mg without exact chemical composition. It was established by optical spectroscopy data that both type films are semiconductor with undispersed region lower 0.18 eV with n(o) = 3.59 +/- 0.01, but only two direct interband transitions with energies 0.75-0.76 eV and 1.2 eV have been determined. The last interband transition has been confirmed by photoreflectance data at room temperature. Fourier transmittance spectroscopy and Raman spectroscopy data have established the formation of stannide, silicide and ternary compositions

Optical and structural properties of sol-gel derived materials embedded in porous anodic alumina

Structure composing a xerogel, doped with lanthanide ions (erbium, terbium and europium), embedded in porous anodic alumina (PAA) have been fabricated and their optical and electrical characterisitics have been studied. Erbium photoluminescence at 1.53 µm from titania xerogel/PAA was found to increase with the number of xerogel layers and erbium concnetration for the excitation wavelength 532 nm, matching the area of transparency of both titania xerogel and PAA. Visible green and red electroluminescence was observed for terbium- and europium-doped IN2O3 and SnO2 xerogels embedded in porous anodic alumina. The improvement of the electrical properties of the xerogel/PAA cell is discussed, taking into account the observed ability of conducting In2O3:Sn (ITO) nanoparticles to penetrate into the anodic alumina pores

Photoluminescence investigations of 2D hole Landau levels in p-type single Al_{x}Ga_{1-x}As/GaAs heterostructures

We study the energy structure of two-dimensional holes in p-type single Al_{1-x}Ga_{x}As/GaAs heterojunctions under a perpendicular magnetic field. Photoluminescence measurments with low densities of excitation power reveal rich spectra containing both free and bound-carrier transitions. The experimental results are compared with energies of valence-subband Landau levels calculated using a new numerical procedure and a good agreement is achieved. Additional lines observed in the energy range of free-carrier recombinations are attributed to excitonic transitions. We also consider the role of many-body effects in photoluminescence spectra.Comment: 13 pages, 10 figures, accepted to Physical Review

Benefits and risks of the hormetic effects of dietary isothiocyanates on cancer prevention

The isothiocyanate (ITC) sulforaphane (SFN) was shown at low levels (1-5 µM) to promote cell proliferation to 120-143% of the controls in a number of human cell lines, whilst at high levels (10-40 µM) it inhibited such cell proliferation. Similar dose responses were observed for cell migration, i.e. SFN at 2.5 µM increased cell migration in bladder cancer T24 cells to 128% whilst high levels inhibited cell migration. This hormetic action was also found in an angiogenesis assay where SFN at 2.5 µM promoted endothelial tube formation (118% of the control), whereas at 10-20 µM it caused significant inhibition. The precise mechanism by which SFN influences promotion of cell growth and migration is not known, but probably involves activation of autophagy since an autophagy inhibitor, 3-methyladenine, abolished the effect of SFN on cell migration. Moreover, low doses of SFN offered a protective effect against free-radical mediated cell death, an effect that was enhanced by co-treatment with selenium. These results suggest that SFN may either prevent or promote tumour cell growth depending on the dose and the nature of the target cells. In normal cells, the promotion of cell growth may be of benefit, but in transformed or cancer cells it may be an undesirable risk factor. In summary, ITCs have a biphasic effect on cell growth and migration. The benefits and risks of ITCs are not only determined by the doses, but are affected by interactions with Se and the measured endpoint

Application of photoreflectance to advanced multilayer structures for photovoltaics

Photoreflectance (PR) is a convenient characterization tool able to reveal optoelectronic properties of semiconductor materials and structures. It is a simple non-destructive and contactless technique which can be used in air at room temperature. We will present experimental results of the characterization carried out by means of PR on different types of advanced photovoltaic (PV) structures, including quantum-dot-based prototypes of intermediate band solar cells, quantum-well structures, highly mismatched alloys, and III?V-based multi-junction devices, thereby demonstrating the suitability of PR as a powerful diagnostic tool. Examples will be given to illustrate the value of this spectroscopic technique for PV including (i) the analysis of the PR spectra in search of critical points associated to absorption onsets; (ii) distinguishing signatures related to quantum confinement from those originating from delocalized band states; (iii) determining the intensity of the electric field related to built-in potentials at interfaces according to the Franz?Keldysh (FK) theory; and (v) determining the nature of different oscillatory PR signals among those ascribed to FK-oscillations, interferometric and photorefractive effects. The aim is to attract the interest of researchers in the field of PV to modulation spectroscopies, as they can be helpful in the analysis of their devices

GaSbBi alloys and heterostructures: fabrication and properties

International audienceDilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2-5 µm). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This book chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures